BUZ31L
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Infineon Technologies BUZ31L

Manufacturer No:
BUZ31L
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
BUZ31L Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 13.5A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:13.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:200mOhm @ 7A, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):95W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number BUZ31L BUZ31  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 13.5A (Tc) 14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V
Rds On (Max) @ Id, Vgs 200mOhm @ 7A, 5V 200mOhm @ 9A, 5V
Vgs(th) (Max) @ Id 2V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V 1120 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 95W (Tc) 95W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3

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