BUZ31HXKSA1
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Infineon Technologies BUZ31HXKSA1

Manufacturer No:
BUZ31HXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
BUZ31HXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 14.5A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:200mOhm @ 9A, 5V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1120 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):95W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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$0.66
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Similar Products

Part Number BUZ31HXKSA1 BUZ32HXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 200 V -
Current - Continuous Drain (Id) @ 25°C 14.5A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 5V -
Rds On (Max) @ Id, Vgs 200mOhm @ 9A, 5V -
Vgs(th) (Max) @ Id 4V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1120 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 95W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package PG-TO220-3 -
Package / Case TO-220-3 -

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