BUZ30AH
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Infineon Technologies BUZ30AH

Manufacturer No:
BUZ30AH
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BUZ30AH Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 21A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:130mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number BUZ30AH BUZ30A  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 13.5A, 10V 130mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 25 V 1900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3

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