Infineon Technologies-BUP213 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	32 A
Current - Collector Pulsed (Icm):	64 A
Vce(on) (Max) @ Vge, Ic:	3.2V @ 15V, 15A
Power - Max:	200 W
Switching Energy:	-
Input Type:	Standard
Gate Charge:	-
Td (on/off) @ 25°C:	70ns/400ns
Test Condition:	600V, 15A, 82Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB

Infineon Technologies BUP213