Infineon Technologies-BTS282ZE3230AKSA2 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	49 V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:	2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:	232 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4800 pF @ 25 V
FET Feature:	Temperature Sensing Diode
Power Dissipation (Max):	300W (Tc)
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO220-7-12
Package / Case:	TO-220-7

Infineon Technologies BTS282ZE3230AKSA2