BTS282ZE3180AATMA2
  • Share:

Infineon Technologies BTS282ZE3180AATMA2

Manufacturer No:
BTS282ZE3180AATMA2
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BTS282ZE3180AATMA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 49V 80A TO263-7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):49 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:232 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4800 pF @ 25 V
FET Feature:Temperature Sensing Diode
Power Dissipation (Max):300W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-1
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
0 Remaining View Similar

In Stock

$7.18
101

Please send RFQ , we will respond immediately.

Similar Products

Part Number BTS282ZE3180AATMA2 BTS282ZE3180AATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 49 V -
Current - Continuous Drain (Id) @ 25°C 80A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 6.5mOhm @ 36A, 10V -
Vgs(th) (Max) @ Id 2V @ 240µA -
Gate Charge (Qg) (Max) @ Vgs 232 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V -
FET Feature Temperature Sensing Diode -
Power Dissipation (Max) 300W (Tc) -
Operating Temperature -40°C ~ 175°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-TO263-7-1 -
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA -

Related Product By Categories

CPH3348-TL-E
CPH3348-TL-E
Sanyo
P-CHANNEL MOSFET
2SJ654
2SJ654
onsemi
P-CHANNL SILICON MOSFET
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
SQJ403BEEP-T1_GE3
SQJ403BEEP-T1_GE3
Vishay Siliconix
MOSFET P-CH 30V 30A PPAK SO-8
SIA445EDJT-T1-GE3
SIA445EDJT-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 12A PPAK SC70-6
TK62J60W,S1VQ
TK62J60W,S1VQ
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 61.8A TO3P
FQU2N60CTLTU
FQU2N60CTLTU
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
NVMJS0D9N04CLTWG
NVMJS0D9N04CLTWG
onsemi
MOSFET N-CH 40V 50A/330A 8LFPAK
FDD20AN06A0-F085
FDD20AN06A0-F085
Fairchild Semiconductor
FDD20AN06 - N-CHANNEL POWERTRENC
IRF7807VTR
IRF7807VTR
Infineon Technologies
MOSFET N-CH 30V 8.3A 8SO
PMN38EN,135
PMN38EN,135
NXP USA Inc.
MOSFET N-CH 30V 5.4A 6TSOP
2SK4177-DL-E
2SK4177-DL-E
onsemi
MOSFET N-CH 1500V 2A SMP-FD

Related Product By Brand

IRFU1205
IRFU1205
Infineon Technologies
MOSFET N-CH 55V 44A IPAK
IRLR014NTRR
IRLR014NTRR
Infineon Technologies
MOSFET N-CH 55V 10A DPAK
IRL3715L
IRL3715L
Infineon Technologies
MOSFET N-CH 20V 54A TO262
IRF3709ZSTRR
IRF3709ZSTRR
Infineon Technologies
MOSFET N-CH 30V 87A D2PAK
IRFHM9391TRPBF
IRFHM9391TRPBF
Infineon Technologies
MOSFET P-CH 30V 11A 8PQFN
IRG4BC10SD-L
IRG4BC10SD-L
Infineon Technologies
IGBT 600V 14A 38W TO262
CY8C3446AXI-098
CY8C3446AXI-098
Infineon Technologies
IC MCU 8BIT 64KB FLASH 100TQFP
CY8C24223A-24PVXAT
CY8C24223A-24PVXAT
Infineon Technologies
IC MCU 8BIT 4KB FLASH 20SSOP
MB90025FPMT-GS-247E1
MB90025FPMT-GS-247E1
Infineon Technologies
IC MCU 120LQFP
MB91F016APFV-GSK5E1
MB91F016APFV-GSK5E1
Infineon Technologies
IC MCU 144LQFP
CY7C1360S-166AXCT
CY7C1360S-166AXCT
Infineon Technologies
IC SRAM 9MBIT PARALLEL 100TQFP
STK15C88-SF25
STK15C88-SF25
Infineon Technologies
IC NVSRAM 256KBIT PAR 28SOIC