BTS282Z E3230
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Infineon Technologies BTS282Z E3230

Manufacturer No:
BTS282Z E3230
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
BTS282Z E3230 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 49V 80A TO220-7
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):49 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:232 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4800 pF @ 25 V
FET Feature:Temperature Sensing Diode
Power Dissipation (Max):300W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:P-TO220-7-230
Package / Case:TO-220-7
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Similar Products

Part Number BTS282Z E3230 BTS282ZE3230  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 49 V -
Current - Continuous Drain (Id) @ 25°C 80A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 6.5mOhm @ 36A, 10V -
Vgs(th) (Max) @ Id 2V @ 240µA -
Gate Charge (Qg) (Max) @ Vgs 232 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V -
FET Feature Temperature Sensing Diode -
Power Dissipation (Max) 300W (Tc) -
Operating Temperature -40°C ~ 175°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package P-TO220-7-230 -
Package / Case TO-220-7 -

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