BTS247ZE3062AATMA2
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Infineon Technologies BTS247ZE3062AATMA2

Manufacturer No:
BTS247ZE3062AATMA2
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BTS247ZE3062AATMA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 33A TO263-5
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:18mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1730 pF @ 25 V
FET Feature:Temperature Sensing Diode
Power Dissipation (Max):120W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-5-2
Package / Case:TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
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$3.11
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Similar Products

Part Number BTS247ZE3062AATMA2 BTS244ZE3062AATMA2  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 12A, 10V 13mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2V @ 90µA 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1730 pF @ 25 V 2660 pF @ 25 V
FET Feature Temperature Sensing Diode Temperature Sensing Diode
Power Dissipation (Max) 120W (Tc) 170W (Tc)
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-5-2 PG-TO263-5-2
Package / Case TO-263-5, D²Pak (4 Leads + Tab), TO-263BB TO-263-5, D²Pak (4 Leads + Tab), TO-263BB

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