BTS244ZE3043
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Infineon Technologies BTS244ZE3043

Manufacturer No:
BTS244ZE3043
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BTS244ZE3043 Datasheet
ECAD Model:
-
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):170W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-5
Package / Case:TO-220-5
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Similar Products

Part Number BTS244ZE3043 BTS244Z E3043  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 19A, 10V 13mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2V @ 130µA 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2660 pF @ 25 V 2660 pF @ 25 V
FET Feature - Temperature Sensing Diode
Power Dissipation (Max) 170W (Tc) 170W (Tc)
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-5 P-TO220-5-43
Package / Case TO-220-5 TO-220-5

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