Infineon Technologies-BTS115AE6327 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	50 V
Current - Continuous Drain (Id) @ 25°C:	15.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V
Rds On (Max) @ Id, Vgs:	120mOhm @ 7.8A, 4.5V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	735 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	50W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO220-3-1
Package / Case:	TO-220-3

Infineon Technologies BTS115AE6327