BTS113ANKSA1
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Infineon Technologies BTS113ANKSA1

Manufacturer No:
BTS113ANKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
BTS113ANKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 11.5A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V
Rds On (Max) @ Id, Vgs:170mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:560 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number BTS113ANKSA1 BTS115ANKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 50 V
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc) 15.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V 4.5V
Rds On (Max) @ Id, Vgs 170mOhm @ 5.8A, 4.5V 120mOhm @ 7.8A, 4.5V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 560 pF @ 25 V 735 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 40W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3

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