Infineon Technologies-BSZ215CHXTMA1 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	N and P-Channel Complementary
FET Feature:	Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	5.1A, 3.2A
Rds On (Max) @ Id, Vgs:	55mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id:	1.4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:	2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	419pF @ 10V
Power - Max:	2.5W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN
Supplier Device Package:	PG-TSDSON-8

Infineon Technologies BSZ215CHXTMA1