Infineon Technologies-BSZ160N10NS3GATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	8A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 12µA
Gate Charge (Qg) (Max) @ Vgs:	25 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1700 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	2.1W (Ta), 63W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TSDSON-8
Package / Case:	8-PowerTDFN

Infineon Technologies BSZ160N10NS3GATMA1