BSZ12DN20NS3GATMA1
  • Share:

Infineon Technologies BSZ12DN20NS3GATMA1

Manufacturer No:
BSZ12DN20NS3GATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSZ12DN20NS3GATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 11.3A 8TSDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:125mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id:4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:8.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:680 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.78
412

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSZ12DN20NS3GATMA1 BSZ22DN20NS3GATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 11.3A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 5.7A, 10V 225mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 25µA 4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 10 V 5.6 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 100 V 430 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 50W (Tc) 34W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TSDSON-8 PG-TSDSON-8
Package / Case 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

IRLZ34NPBF
IRLZ34NPBF
Infineon Technologies
MOSFET N-CH 55V 30A TO220AB
SPW47N60C3FKSA1
SPW47N60C3FKSA1
Infineon Technologies
MOSFET N-CH 650V 47A TO247-3
GAN041-650WSBQ
GAN041-650WSBQ
Nexperia USA Inc.
GAN041-650WSB/SOT429/TO-247
TN5325N8-G
TN5325N8-G
Microchip Technology
MOSFET N-CH 250V 316MA TO243AA
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
IPD100N06S403ATMA2
IPD100N06S403ATMA2
Infineon Technologies
MOSFET N-CH 60V 100A TO252-3-11
SI7804DN-T1-GE3
SI7804DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 6.5A PPAK1212-8
IRFU7740PBF
IRFU7740PBF
Infineon Technologies
MOSFET N-CH 75V 87A IPAK
STF34NM60N
STF34NM60N
STMicroelectronics
MOSFET N-CH 600V 31.5A TO220FP
AUIRF1405
AUIRF1405
Infineon Technologies
MOSFET N-CH 55V 75A TO220AB
IRF9383MTR1PBF
IRF9383MTR1PBF
Infineon Technologies
MOSFET P-CH 30V 22A DIRECTFET
R5013ANJTL
R5013ANJTL
Rohm Semiconductor
MOSFET N-CH 500V 13A LPTS

Related Product By Brand

AUIRFS8409-7P
AUIRFS8409-7P
Infineon Technologies
MOSFET N-CH 40V 240A D2PAK
IPW65R150CFDFKSA1
IPW65R150CFDFKSA1
Infineon Technologies
MOSFET N-CH 650V 22.4A TO247-3
AUIRLR3915TRL
AUIRLR3915TRL
Infineon Technologies
MOSFET N-CH 55V 30A DPAK
FF600R17ME4B11BOSA1
FF600R17ME4B11BOSA1
Infineon Technologies
IGBT MODULE VCES 1700V 600A
PBL38620/2SHAR2B
PBL38620/2SHAR2B
Infineon Technologies
FLEXISLIC SLIC
BTS5012SDA
BTS5012SDA
Infineon Technologies
BTS5012 - PROFET - SMART HIGH SI
IR3870MTRPBF
IR3870MTRPBF
Infineon Technologies
IC REG BUCK ADJUSTABLE 10A PQFN
MB90F387SPMCR-G-EF2E2
MB90F387SPMCR-G-EF2E2
Infineon Technologies
IC MCU 16BIT 64KB FLASH 48LQFP
MB95F118BSPMT-G-SNE1
MB95F118BSPMT-G-SNE1
Infineon Technologies
IC MCU 8BIT 60KB FLASH 48LQFP
CY7C1470V25-200BZI
CY7C1470V25-200BZI
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CY62148ELL-45ZSXI
CY62148ELL-45ZSXI
Infineon Technologies
IC SRAM 4MBIT PARALLEL 32TSOP II
S25FL256LDPBHI023
S25FL256LDPBHI023
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 24BGA