Infineon Technologies-BSZ0910NDXTMA1 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	9.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs:	9.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	5.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	800pF @ 15V
Power - Max:	1.9W (Ta), 31W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerVDFN
Supplier Device Package:	PG-WISON-8

Infineon Technologies BSZ0910NDXTMA1