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| Part Number | BSZ086P03NS3EGATMA1 | BSZ086P03NS3GATMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta), 40A (Tc) | 13.5A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 20A, 10V | 8.6mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3.1V @ 105µA | 3.1V @ 105µA |
| Gate Charge (Qg) (Max) @ Vgs | 57.5 nC @ 10 V | 57.5 nC @ 10 V |
| Vgs (Max) | ±25V | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 4785 pF @ 15 V | 4785 pF @ 15 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) | 2.1W (Ta), 69W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TSDSON-8 | PG-TSDSON-8 |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN |
