BSZ0803LSATMA1
  • Share:

Infineon Technologies BSZ0803LSATMA1

Manufacturer No:
BSZ0803LSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSZ0803LSATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 9A/40A TSDSON
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.3V @ 23µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.1W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8 FL
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$1.61
539

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSZ0803LSATMA1 BSZ0804LSATMA1   BSZ0703LSATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 60 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 40A (Tc) 11A (Ta), 40A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14.6mOhm @ 20A, 10V 9.6mOhm @ 20A, 10V 6.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 23µA 2.3V @ 36µA 2.3V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 15 nC @ 4.5 V 13 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 50 V 2100 pF @ 50 V 1800 pF @ 30 V
FET Feature - - Standard
Power Dissipation (Max) 2.1W (Ta), 52W (Tc) 2.1W (Ta), 69W (Tc) 46W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8 FL PG-TDSON-8 FL PG-TSDSON-8-26
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

DMT3006LFDF-7
DMT3006LFDF-7
Diodes Incorporated
MOSFET N-CH 30V 14.1A 6UDFN
NTD15N06T4G
NTD15N06T4G
onsemi
N-CHANNEL POWER MOSFET
IRF8714TRPBF
IRF8714TRPBF
Infineon Technologies
MOSFET N-CH 30V 14A 8SO
FDMC7660S
FDMC7660S
onsemi
MOSFET N-CH 30V 20A/40A POWER33
IRFU9010PBF
IRFU9010PBF
Vishay Siliconix
MOSFET P-CH 50V 5.3A TO251AA
DMP3056LDMQ-7
DMP3056LDMQ-7
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT26 T&R
TK090A65Z,S4X
TK090A65Z,S4X
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 30A TO220SIS
IXFP130N10T
IXFP130N10T
IXYS
MOSFET N-CH 100V 130A TO220AB
IXTA240N055T7
IXTA240N055T7
IXYS
MOSFET N-CH 55V 240A TO263-7
2SK3547G0L
2SK3547G0L
Panasonic Electronic Components
MOSFET N-CH 50V 100MA SSSMINI3
IPS65R1K5CEAKMA1
IPS65R1K5CEAKMA1
Infineon Technologies
MOSFET N-CH 650V 3.1A TO251
2SK3050TL
2SK3050TL
Rohm Semiconductor
MOSFET N-CH 600V 2A CPT3

Related Product By Brand

BAS 70-04 B5003
BAS 70-04 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT23
BSO303P
BSO303P
Infineon Technologies
P-CHANNEL POWER MOSFET
AUIRFS8407-7TRL
AUIRFS8407-7TRL
Infineon Technologies
MOSFET N-CH 40V 240A D2PAK
IRLU2703PBF
IRLU2703PBF
Infineon Technologies
MOSFET N-CH 30V 23A IPAK
IKU06N60R
IKU06N60R
Infineon Technologies
IGBT, 12A, 600V, N-CHANNEL
TLF51801ELVXUMA1
TLF51801ELVXUMA1
Infineon Technologies
IC REG CTRLR BUCK
IRU3037ACFTRPBF
IRU3037ACFTRPBF
Infineon Technologies
IC REG CTRLR BUCK/BOOST 8TSSOP
TLS850F0TAV33ATMA1
TLS850F0TAV33ATMA1
Infineon Technologies
IC REG LIN 3.3V 500MA TO263-7-1
CY9BF314NBGL-GE1
CY9BF314NBGL-GE1
Infineon Technologies
IC MCU 32BIT 288KB FLSH 112PFBGA
S25FL128SDPBHBC00
S25FL128SDPBHBC00
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 24BGA
S25FL128SAGMFBR00
S25FL128SAGMFBR00
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC
CY62157DV30L-55ZSXET
CY62157DV30L-55ZSXET
Infineon Technologies
IC SRAM 8MBIT PARALLEL 44TSOP II