BSZ0602LSATMA1
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Infineon Technologies BSZ0602LSATMA1

Manufacturer No:
BSZ0602LSATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSZ0602LSATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 13A/40A TSDSON
Delivery:
Payment:
iso14001
iso45001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2340 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8 FL
Package / Case:8-PowerTDFN
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$1.89
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Similar Products

Part Number BSZ0602LSATMA1 BSZ0702LSATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 60 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 40A (Tc) 17A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 20A, 10V 4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 36µA 2.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V 22 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2340 pF @ 40 V 3100 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 69W (Tc) 2.1W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TDSON-8 FL PG-TDSON-8 FL
Package / Case 8-PowerTDFN 8-PowerTDFN

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