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| Part Number | BSZ0501NSIATMA1 | BSZ0901NSIATMA1 | BSZ0502NSIATMA1 | BSZ0500NSIATMA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 40A (Tc) | 25A (Ta), 40A (Tc) | 22A (Ta), 40A (Tc) | 30A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 20A, 10V | 2.1mOhm @ 20A, 10V | 2.8mOhm @ 20A, 10V | 1.5mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA | 2.2V @ 250µA | 2V @ 250µA | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V | 41 nC @ 10 V | 26 nC @ 10 V | 52 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 15 V | 2600 pF @ 15 V | 1600 pF @ 15 V | 3400 pF @ 15 V |
| FET Feature | - | Schottky Diode (Body) | - | - |
| Power Dissipation (Max) | 2.1W (Ta), 50W (Tc) | 2.1W (Ta), 69W (Tc) | 2.1W (Ta), 43W (Tc) | 2.1W (Ta), 69W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TSDSON-8-FL | PG-TSDSON-8-FL | PG-TSDSON-8-FL | PG-TSDSON-8-FL |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN |
