BSS87H6327FTSA1
  • Share:

Infineon Technologies BSS87H6327FTSA1

Manufacturer No:
BSS87H6327FTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSS87H6327FTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 240V 260MA SOT89-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):240 V
Current - Continuous Drain (Id) @ 25°C:260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 260mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs:5.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:97 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT89-4-2
Package / Case:TO-243AA
0 Remaining View Similar

In Stock

$0.68
1,196

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSS87H6327FTSA1 BSS87H6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 240 V 240 V
Current - Continuous Drain (Id) @ 25°C 260mA (Ta) 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 260mA, 10V 6Ohm @ 260mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 108µA 1.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 10 V 5.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 97 pF @ 25 V 97 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1W (Ta) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT89-4-2 PG-SOT89-4-2
Package / Case TO-243AA TO-243AA

Related Product By Categories

CPH6311-TL-E
CPH6311-TL-E
onsemi
MOSFET P-CH 20V 5A 6CPH
AONR21117
AONR21117
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 20V 26.5A/34A 8DFN
DMT10H010LCT
DMT10H010LCT
Diodes Incorporated
MOSFET N-CH 100V 98A TO220AB
IRL540STRLPBF
IRL540STRLPBF
Vishay Siliconix
MOSFET N-CH 100V 28A D2PAK
SQJ443EP-T1_BE3
SQJ443EP-T1_BE3
Vishay Siliconix
P-CHANNEL 40-V (D-S) 175C MOSFET
NTMFS4927NT3G
NTMFS4927NT3G
onsemi
MOSFET N-CH 30V 7.9A/38A 5DFN
SIHB18N60E-GE3
SIHB18N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 18A TO263
IRF6638TRPBF
IRF6638TRPBF
Infineon Technologies
MOSFET N-CH 30V 25A DIRECTFET
IPD135N03LGXT
IPD135N03LGXT
Infineon Technologies
MOSFET N-CH 30V 30A TO252-3
AON6504_002
AON6504_002
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 51A/85A 8DFN
RSS120N03TB
RSS120N03TB
Rohm Semiconductor
MOSFET N-CH 30V 12A 8SOP
R6020ENZC8
R6020ENZC8
Rohm Semiconductor
MOSFET N-CH 600V 20A TO3PF

Related Product By Brand

AUIRFN7107TR
AUIRFN7107TR
Infineon Technologies
AUIRFN7107 - 75V-100V N-CHANNEL
IPW65R019C7
IPW65R019C7
Infineon Technologies
75A, 650V, 0.019OHM, N-CHANNEL M
IPU60R1K4C6BKMA1
IPU60R1K4C6BKMA1
Infineon Technologies
MOSFET N-CH 600V 3.2A TO251-3
FS50R07U1E4BPSA1
FS50R07U1E4BPSA1
Infineon Technologies
IGBT MODULE 650V 75A 230W
CY3275
CY3275
Infineon Technologies
KIT DEV POWERLINE PROGRAM
CY9BF512NPQC-G-JNE2
CY9BF512NPQC-G-JNE2
Infineon Technologies
IC MCU 32BIT 160KB FLASH 100PQFP
MB90562APMC-G-457-JNE1
MB90562APMC-G-457-JNE1
Infineon Technologies
IC MCU 16BIT 64KB MROM 64LQFP
MB91243PFV-GS-103BNDK5E1
MB91243PFV-GS-103BNDK5E1
Infineon Technologies
IC MCU 144LQFP
S25FL256LAGMFA000
S25FL256LAGMFA000
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 16SOIC
CY7C025-15AC
CY7C025-15AC
Infineon Technologies
IC SRAM 128KBIT PARALLEL 100TQFP
CY7C1354C-200BGC
CY7C1354C-200BGC
Infineon Technologies
IC SRAM 9MBIT PARALLEL 119PBGA
CY7C1518V18-200BZC
CY7C1518V18-200BZC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA