BSS87E6327T
  • Share:

Infineon Technologies BSS87E6327T

Manufacturer No:
BSS87E6327T
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSS87E6327T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 240V 260MA SOT89-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):240 V
Current - Continuous Drain (Id) @ 25°C:260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 260mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs:5.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:97 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT89-4-2
Package / Case:TO-243AA
0 Remaining View Similar

In Stock

-
440

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSS87E6327T BSS87E6327  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 240 V 240 V
Current - Continuous Drain (Id) @ 25°C 260mA (Ta) 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 260mA, 10V 6Ohm @ 260mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 108µA 1.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 10 V 5.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 97 pF @ 25 V 97 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1W (Ta) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT89-4-2 PG-SOT89-4-2
Package / Case TO-243AA TO-243AA

Related Product By Categories

2SK2512-AZ
2SK2512-AZ
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
STB11NK50ZT4
STB11NK50ZT4
STMicroelectronics
MOSFET N-CH 500V 10A D2PAK
PJA3416A_R1_00001
PJA3416A_R1_00001
Panjit International Inc.
SOT-23, MOSFET
IRF4905STRRPBF
IRF4905STRRPBF
Infineon Technologies
MOSFET P-CH 55V 42A D2PAK
FDC640P
FDC640P
onsemi
MOSFET P-CH 20V 4.5A SUPERSOT6
STP30NF20
STP30NF20
STMicroelectronics
MOSFET N-CH 200V 30A TO220AB
IPLK70R600P7ATMA1
IPLK70R600P7ATMA1
Infineon Technologies
MOSFET N-CH 700V TDSON-8
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
IPZA60R045P7XKSA1
IPZA60R045P7XKSA1
Infineon Technologies
MOSFET N-CH 650V 61A TO247-4-3
BUZ31 E3046
BUZ31 E3046
Infineon Technologies
MOSFET N-CH 200V 14.5A TO262-3
IRF7700TRPBF
IRF7700TRPBF
Infineon Technologies
MOSFET P-CH 20V 8.6A 8TSSOP
NVMFS5C604NLT3G
NVMFS5C604NLT3G
onsemi
MOSFET N-CH 60V 40A/287A 5DFN

Related Product By Brand

FF6MR12W2M1PB11BPSA1
FF6MR12W2M1PB11BPSA1
Infineon Technologies
MOSFET MODULE LOW POWER EASY
IRFR13N20DTR
IRFR13N20DTR
Infineon Technologies
MOSFET N-CH 200V 13A DPAK
IRL3714L
IRL3714L
Infineon Technologies
MOSFET N-CH 20V 36A TO262
SPP80N06S08AKSA1
SPP80N06S08AKSA1
Infineon Technologies
MOSFET N-CH 55V 80A TO220-3
IRLH5034TR2PBF
IRLH5034TR2PBF
Infineon Technologies
MOSFET N-CH 40V 100A 5X6 PQFN
ADM6996LX-AA-R-1
ADM6996LX-AA-R-1
Infineon Technologies
IC ETHERNET SW CTRLR 128QFP
TLE6250PG
TLE6250PG
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8
BCM943364WCD1_EVB
BCM943364WCD1_EVB
Infineon Technologies
EVALUATION AND DEVELOPMENT BOARD
MB90025EPMT-GS-116E1
MB90025EPMT-GS-116E1
Infineon Technologies
IC MCU 120LQFP
MB90598GHPF-G-195-JNE1
MB90598GHPF-G-195-JNE1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100QFP
MB90922NCSPMC-GS-140E1
MB90922NCSPMC-GS-140E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 120LQFP
CY7C1414JV18-250BZXC
CY7C1414JV18-250BZXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA