BSS84PW
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Infineon Technologies BSS84PW

Manufacturer No:
BSS84PW
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSS84PW Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 150MA SOT323-3
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id:2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:19.1 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT323
Package / Case:SC-70, SOT-323
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Similar Products

Part Number BSS84PW BSS84W  
Manufacturer Infineon Technologies Taiwan Semiconductor Corporation
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 150mA (Ta) 140mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 150mA, 10V 8Ohm @ 140mA, 10V
Vgs(th) (Max) @ Id 2V @ 20µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 10 V 1.9 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 19.1 pF @ 25 V 37 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 300mW (Ta) 298mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT323 SOT-323
Package / Case SC-70, SOT-323 SC-70, SOT-323

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