Infineon Technologies-BSS816NW L6327 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 2.5V
Rds On (Max) @ Id, Vgs:	160mOhm @ 1.4A, 2.5V
Vgs(th) (Max) @ Id:	750mV @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs:	0.6 nC @ 2.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	180 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	500mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-SOT323
Package / Case:	SC-70, SOT-323

Infineon Technologies BSS816NW L6327