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| Part Number | BSS806NH6327XTSA1 | BSS306NH6327XTSA1 | BSS606NH6327XTSA1 | BSS806NEH6327XTSA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V | 30 V | 60 V | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) | 2.3A (Ta) | 3.2A (Ta) | 2.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 2.5V | 4.5V, 10V | 4.5V, 10V | 1.8V, 2.5V |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 2.3A, 2.5V | 57mOhm @ 2.3A, 10V | 60mOhm @ 3.2A, 10V | 57mOhm @ 2.3A, 2.5V |
| Vgs(th) (Max) @ Id | 750mV @ 11µA | 2V @ 11µA | 2.3V @ 15µA | 750mV @ 11µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.7 nC @ 2.5 V | 1.5 nC @ 5 V | 5.6 nC @ 5 V | 1.7 nC @ 2.5 V |
| Vgs (Max) | ±8V | ±20V | ±20V | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 529 pF @ 10 V | 275 pF @ 15 V | 657 pF @ 25 V | 529 pF @ 10 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 500mW (Ta) | 500mW (Ta) | 1W (Ta) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | PG-SOT23 | PG-SOT23 | PG-SOT89 | PG-SOT23 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-243AA | TO-236-3, SC-59, SOT-23-3 |
