BSS806NEH6327XTSA1
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Infineon Technologies BSS806NEH6327XTSA1

Manufacturer No:
BSS806NEH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSS806NEH6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 2.3A SOT23-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 2.5V
Rds On (Max) @ Id, Vgs:57mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id:750mV @ 11µA
Gate Charge (Qg) (Max) @ Vgs:1.7 nC @ 2.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:529 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSS806NEH6327XTSA1 BSS806NH6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.5V 1.8V, 2.5V
Rds On (Max) @ Id, Vgs 57mOhm @ 2.3A, 2.5V 57mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id 750mV @ 11µA 750mV @ 11µA
Gate Charge (Qg) (Max) @ Vgs 1.7 nC @ 2.5 V 1.7 nC @ 2.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 529 pF @ 10 V 529 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT23 PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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