Infineon Technologies-BSS670S2LH6327XTSA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	55 V
Current - Continuous Drain (Id) @ 25°C:	540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	650mOhm @ 270mA, 10V
Vgs(th) (Max) @ Id:	2V @ 2.7µA
Gate Charge (Qg) (Max) @ Vgs:	2.26 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	75 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	360mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-SOT23
Package / Case:	TO-236-3, SC-59, SOT-23-3

Infineon Technologies BSS670S2LH6327XTSA1