BSS606NH6327XTSA1
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Infineon Technologies BSS606NH6327XTSA1

Manufacturer No:
BSS606NH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSS606NH6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 3.2A SOT89
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:60mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:2.3V @ 15µA
Gate Charge (Qg) (Max) @ Vgs:5.6 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:657 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT89
Package / Case:TO-243AA
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$0.66
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Similar Products

Part Number BSS606NH6327XTSA1 BSS806NH6327XTSA1   BSS306NH6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) 2.3A (Ta) 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 1.8V, 2.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 3.2A, 10V 57mOhm @ 2.3A, 2.5V 57mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id 2.3V @ 15µA 750mV @ 11µA 2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 5 V 1.7 nC @ 2.5 V 1.5 nC @ 5 V
Vgs (Max) ±20V ±8V ±20V
Input Capacitance (Ciss) (Max) @ Vds 657 pF @ 25 V 529 pF @ 10 V 275 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 1W (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT89 PG-SOT23 PG-SOT23
Package / Case TO-243AA TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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