BSS316NL6327HTSA1
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Infineon Technologies BSS316NL6327HTSA1

Manufacturer No:
BSS316NL6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSS316NL6327HTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 1.4A SOT23-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:160mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id:2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:94 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSS316NL6327HTSA1 BSS306NL6327HTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 1.4A, 10V 57mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id 2V @ 3.7µA 2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 5 V 1.5 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 94 pF @ 15 V 275 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT23 PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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