Infineon Technologies-BSS225L6327HTSA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	90mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	45Ohm @ 90mA, 10V
Vgs(th) (Max) @ Id:	2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs:	5.8 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	131 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	1W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-SOT89
Package / Case:	TO-243AA

Infineon Technologies BSS225L6327HTSA1