BSS223PW L6327
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Infineon Technologies BSS223PW L6327

Manufacturer No:
BSS223PW L6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSS223PW L6327 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 390MA SOT323-3
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:390mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 390mA, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 1.5µA
Gate Charge (Qg) (Max) @ Vgs:0.62 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:56 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):250mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT323
Package / Case:SC-70, SOT-323
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Similar Products

Part Number BSS223PW L6327 BSS223PWL6327  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 390mA (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V -
Rds On (Max) @ Id, Vgs 1.2Ohm @ 390mA, 4.5V -
Vgs(th) (Max) @ Id 1.2V @ 1.5µA -
Gate Charge (Qg) (Max) @ Vgs 0.62 nC @ 4.5 V -
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 56 pF @ 15 V -
FET Feature - -
Power Dissipation (Max) 250mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-SOT323 -
Package / Case SC-70, SOT-323 -

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