BSS215PL6327HTSA1
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Infineon Technologies BSS215PL6327HTSA1

Manufacturer No:
BSS215PL6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSS215PL6327HTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 1.5A SOT23-3
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:150mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs:3.6 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:346 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSS215PL6327HTSA1 BSS315PL6327HTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 1.5A, 4.5V 150mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 1.2V @ 11µA 2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs 3.6 nC @ 4.5 V 2.3 nC @ 5 V
Vgs (Max) ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 346 pF @ 15 V 282 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT23 PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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