Infineon Technologies-BSS209PWH6327XTSA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	630mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	550mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 3.5µA
Gate Charge (Qg) (Max) @ Vgs:	1.3 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	115 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	300mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-SOT323
Package / Case:	SC-70, SOT-323

Infineon Technologies BSS209PWH6327XTSA1