Infineon Technologies-BSS192PL6327HTSA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	250 V
Current - Continuous Drain (Id) @ 25°C:	190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.8V, 10V
Rds On (Max) @ Id, Vgs:	12Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id:	2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:	6.1 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	104 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	1W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-SOT89
Package / Case:	TO-243AA

Infineon Technologies BSS192PL6327HTSA1