BSS192PE6327
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Infineon Technologies BSS192PE6327

Manufacturer No:
BSS192PE6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSS192PE6327 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 250V 190MA SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.8V, 10V
Rds On (Max) @ Id, Vgs:12Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id:2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:6.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:104 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT89
Package / Case:TO-243AA
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Similar Products

Part Number BSS192PE6327 BSS192PE6327T  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 250 V
Current - Continuous Drain (Id) @ 25°C 190mA (Ta) 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V 2.8V, 10V
Rds On (Max) @ Id, Vgs 12Ohm @ 190mA, 10V 12Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id 2V @ 130µA 2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 6.1 nC @ 10 V 6.1 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 104 pF @ 25 V 104 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1W (Ta) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT89 PG-SOT89
Package / Case TO-243AA TO-243AA

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