BSS169H6327XTSA1
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Infineon Technologies BSS169H6327XTSA1

Manufacturer No:
BSS169H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSS169H6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):0V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:2.8 nC @ 7 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:68 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSS169H6327XTSA1 BSS139H6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 250 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V 0V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 14Ohm @ 100µA, 10V
Vgs(th) (Max) @ Id 1.8V @ 50µA 1V @ 56µA
Gate Charge (Qg) (Max) @ Vgs 2.8 nC @ 7 V 3.5 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 68 pF @ 25 V 76 pF @ 25 V
FET Feature Depletion Mode Depletion Mode
Power Dissipation (Max) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT23 PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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