BSS139L6327HTSA1
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Infineon Technologies BSS139L6327HTSA1

Manufacturer No:
BSS139L6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSS139L6327HTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 100MA SOT23-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):0V, 10V
Rds On (Max) @ Id, Vgs:14Ohm @ 0.1mA, 10V
Vgs(th) (Max) @ Id:1V @ 56µA
Gate Charge (Qg) (Max) @ Vgs:3.5 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:76 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSS139L6327HTSA1 BSS169L6327HTSA1   BSS131L6327HTSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 100 V 240 V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta) 170mA (Ta) 110mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V 0V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14Ohm @ 0.1mA, 10V 6Ohm @ 170mA, 10V 14Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 1V @ 56µA 1.8V @ 50µA 1.8V @ 56µA
Gate Charge (Qg) (Max) @ Vgs 3.5 nC @ 5 V 2.8 nC @ 7 V 3.1 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 76 pF @ 25 V 68 pF @ 25 V 77 pF @ 25 V
FET Feature Depletion Mode Depletion Mode -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT23 PG-SOT23 PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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