BSS139H6327XTSA1
  • Share:

Infineon Technologies BSS139H6327XTSA1

Manufacturer No:
BSS139H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSS139H6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 100MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):0V, 10V
Rds On (Max) @ Id, Vgs:14Ohm @ 100µA, 10V
Vgs(th) (Max) @ Id:1V @ 56µA
Gate Charge (Qg) (Max) @ Vgs:3.5 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:76 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.59
325

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSS139H6327XTSA1 BSS169H6327XTSA1   BSS131H6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 100 V 240 V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta) 170mA (Ta) 110mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V 0V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14Ohm @ 100µA, 10V 6Ohm @ 170mA, 10V 14Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 1V @ 56µA 1.8V @ 50µA 1.8V @ 56µA
Gate Charge (Qg) (Max) @ Vgs 3.5 nC @ 5 V 2.8 nC @ 7 V 3.1 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 76 pF @ 25 V 68 pF @ 25 V 77 pF @ 25 V
FET Feature Depletion Mode Depletion Mode -
Power Dissipation (Max) 360mW (Ta) 360mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT23 PG-SOT23 PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

ISL9N322AS3ST
ISL9N322AS3ST
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
DIT100N10
DIT100N10
Diotec Semiconductor
MOSFET N-CH 100V 100A TO220AB
FQP2N90
FQP2N90
onsemi
MOSFET N-CH 900V 2.2A TO220-3
IXTA96P085T-TRL
IXTA96P085T-TRL
IXYS
MOSFET P-CH 85V 96A TO263
NTR4502PT1G
NTR4502PT1G
onsemi
MOSFET P-CH 30V 1.13A SOT23-3
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
IRFS4010TRL7PP
IRFS4010TRL7PP
Infineon Technologies
MOSFET N-CH 100V 190A D2PAK
IPU60R600C6
IPU60R600C6
Infineon Technologies
N-CHANNEL POWER MOSFET
NTD50N03R-35G
NTD50N03R-35G
onsemi
MOSFET N-CH 25V 7.8A/45A IPAK
2SK3313(Q)
2SK3313(Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 500V 12A TO220NIS
IXTP54N30T
IXTP54N30T
IXYS
MOSFET N-CH 300V 54A TO220AB
STW48N60DM2
STW48N60DM2
STMicroelectronics
MOSFET N-CH 600V 40A TO247

Related Product By Brand

ESD5V0L1B02VH6327XTSA1
ESD5V0L1B02VH6327XTSA1
Infineon Technologies
TVS DIODE 5VWM 25VC SC79-2
IPA057N08N3GXKSA1
IPA057N08N3GXKSA1
Infineon Technologies
MOSFET N-CH 80V 60A TO220-FP
IRF7422D2PBF
IRF7422D2PBF
Infineon Technologies
MOSFET P-CH 20V 4.3A 8SO
SIGC42T60SNCX1SA2
SIGC42T60SNCX1SA2
Infineon Technologies
IGBT 3 CHIP 600V WAFER
AUIPS2031RTRL
AUIPS2031RTRL
Infineon Technologies
IC PWR SWITCH N-CHANNEL 1:1 DPAK
KP253HP
KP253HP
Infineon Technologies
AUTOMOTIVE PRESSURE SENSOR
MB91F525FSCPMC-GTE1
MB91F525FSCPMC-GTE1
Infineon Technologies
IC MCU 32BIT 832KB FLASH 100LQFP
CY7C68023-56LFXC
CY7C68023-56LFXC
Infineon Technologies
IC CTLR USB NX2LP NAND 56VQFN
CY7C1570KV18-400BZXI
CY7C1570KV18-400BZXI
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CY7C1424KV18-250BZC
CY7C1424KV18-250BZC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
S29CL016J0JQFM030
S29CL016J0JQFM030
Infineon Technologies
IC FLASH 16MBIT PARALLEL 80PQFP
S34MS01G200BHI003
S34MS01G200BHI003
Infineon Technologies
IC FLASH 1GBIT PARALLEL 63BGA