BSS127H6327XTSA1
  • Share:

Infineon Technologies BSS127H6327XTSA1

Manufacturer No:
BSS127H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSS127H6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 21MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id:2.6V @ 8µA
Gate Charge (Qg) (Max) @ Vgs:1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:28 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
241

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSS127H6327XTSA1 BSS127H6327XTSA2   BSS126H6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 21mA (Ta) 21mA (Ta) 21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 0V, 10V
Rds On (Max) @ Id, Vgs 500Ohm @ 16mA, 10V 500Ohm @ 16mA, 10V 500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id 2.6V @ 8µA 2.6V @ 8µA 1.6V @ 8µA
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 10 V 1 nC @ 10 V 2.1 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 28 pF @ 25 V 28 pF @ 25 V 28 pF @ 25 V
FET Feature - - Depletion Mode
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT23 PG-SOT23 PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

APT18M100S
APT18M100S
Microchip Technology
MOSFET N-CH 1000V 18A D3PAK
HRFZ44N
HRFZ44N
Fairchild Semiconductor
MOSFET N-CH 55V 49A TO220-3
STU7N105K5
STU7N105K5
STMicroelectronics
MOSFET N-CH 1050V 4A IPAK
APT106N60LC6
APT106N60LC6
Microchip Technology
MOSFET N-CH 600V 106A TO264
BSC030P03NS3GAUMA1
BSC030P03NS3GAUMA1
Infineon Technologies
MOSFET P-CH 30V 25.4/100A 8TDSON
AOT10N60
AOT10N60
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 10A TO220
PJD50N10AL_L2_00001
PJD50N10AL_L2_00001
Panjit International Inc.
100V N-CHANNEL ENHANCEMENT MODE
NTTD4401FR2
NTTD4401FR2
onsemi
MOSFET P-CH 20V 2.4A MICRO8
IRFR120NPBF
IRFR120NPBF
Infineon Technologies
MOSFET N-CH 100V 9.4A DPAK
IXTY3N50P
IXTY3N50P
IXYS
MOSFET N-CH 500V 3.6A TO252AA
NVMFS5C460NLT1G
NVMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
FDN5618P_G
FDN5618P_G
onsemi
MOSFET P-CH 60V 1.25A SUPERSOT3

Related Product By Brand

TZ310N26KOFHPSA1
TZ310N26KOFHPSA1
Infineon Technologies
SCR MODULE 2.6KV 700A MODULE
IPD90N06S4L06ATMA2
IPD90N06S4L06ATMA2
Infineon Technologies
MOSFET N-CH 60V 90A TO252-31
BSC120N03LSG
BSC120N03LSG
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 1
IRLR8503TRPBF
IRLR8503TRPBF
Infineon Technologies
MOSFET N-CH 30V 44A DPAK
IRF6720S2TR1PBF
IRF6720S2TR1PBF
Infineon Technologies
MOSFET N-CH 30V 11A DIRECTFET
IRFH3702TR2PBF
IRFH3702TR2PBF
Infineon Technologies
MOSFET N-CH 30V 16A 8PQFN
TC213L8F133NACKXUMA1
TC213L8F133NACKXUMA1
Infineon Technologies
IC MCU 32BIT 512KB FLASH 100TQFP
CY2304NZZXI-1
CY2304NZZXI-1
Infineon Technologies
IC CLK ZDB 4OUT 140MHZ 8TSSOP
MB90022PF-GS-467E1
MB90022PF-GS-467E1
Infineon Technologies
IC MCU 16BIT 100QFP
CY90F543PF-GE1
CY90F543PF-GE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100QFP
CY9AFA32MPMC-G-SNE2
CY9AFA32MPMC-G-SNE2
Infineon Technologies
IC MCU 32BIT 128KB FLASH 80LQFP
CY14B101K-SP35XI
CY14B101K-SP35XI
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 48SSOP