BSS127H6327XTSA1
  • Share:

Infineon Technologies BSS127H6327XTSA1

Manufacturer No:
BSS127H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSS127H6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 21MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id:2.6V @ 8µA
Gate Charge (Qg) (Max) @ Vgs:1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:28 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
241

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSS127H6327XTSA1 BSS127H6327XTSA2   BSS126H6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 21mA (Ta) 21mA (Ta) 21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 0V, 10V
Rds On (Max) @ Id, Vgs 500Ohm @ 16mA, 10V 500Ohm @ 16mA, 10V 500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id 2.6V @ 8µA 2.6V @ 8µA 1.6V @ 8µA
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 10 V 1 nC @ 10 V 2.1 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 28 pF @ 25 V 28 pF @ 25 V 28 pF @ 25 V
FET Feature - - Depletion Mode
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT23 PG-SOT23 PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSC0908NS
BSC0908NS
Infineon Technologies
N-CHANNEL POWER MOSFET
SI4874BDY-T1-E3
SI4874BDY-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 12A 8SO
PJA3439_R1_00001
PJA3439_R1_00001
Panjit International Inc.
SOT-23, MOSFET
FQT13N06TF
FQT13N06TF
onsemi
MOSFET N-CH 60V 2.8A SOT223-4
BUK7Y13-40B,115
BUK7Y13-40B,115
Nexperia USA Inc.
MOSFET N-CH 40V 58A LFPAK56
SI7172DP-T1-GE3
SI7172DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 200V 25A PPAK SO-8
HUF75321D3ST
HUF75321D3ST
onsemi
MOSFET N-CH 55V 20A TO252AA
HAT2028RJ-EL
HAT2028RJ-EL
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
IXTK170N10P
IXTK170N10P
IXYS
MOSFET N-CH 100V 170A TO264
IRL520NS
IRL520NS
Infineon Technologies
MOSFET N-CH 100V 10A D2PAK
FDP10N60NZ
FDP10N60NZ
onsemi
MOSFET N-CH 600V 10A TO220-3
TPC8A06-H(TE12LQM)
TPC8A06-H(TE12LQM)
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 12A 8SOP

Related Product By Brand

BCR116SE6327BTSA1
BCR116SE6327BTSA1
Infineon Technologies
TRANS 2NPN PREBIAS 0.25W SOT363
IRF7350TRPBF
IRF7350TRPBF
Infineon Technologies
MOSFET N/P-CH 100V 2.1A 8-SOIC
SPA07N60C3XKSA1
SPA07N60C3XKSA1
Infineon Technologies
MOSFET N-CH 650V 7.3A TO220-FP
111-4095PBF
111-4095PBF
Infineon Technologies
IC GATE DRVR LOW-SIDE 8SOIC
IRS2330STRPBF
IRS2330STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 28SOIC
MB90020PMT-GS-306
MB90020PMT-GS-306
Infineon Technologies
IC MCU 120LQFP
MB91F467SAPMC-C0057
MB91F467SAPMC-C0057
Infineon Technologies
IC MCU 32B 1.0625MB FLSH 176LQFP
CY9AF156MBBGL-GE1
CY9AF156MBBGL-GE1
Infineon Technologies
IC MCU 32BIT 544KB FLASH 96FBGA
S29JL032J70TFI310
S29JL032J70TFI310
Infineon Technologies
IC FLASH 32MBIT PARALLEL 48TSOP
CY22E016L-SZ35XC
CY22E016L-SZ35XC
Infineon Technologies
IC NVSRAM 16KBIT PARALLEL 28SOIC
S29CL032J0RFFM033
S29CL032J0RFFM033
Infineon Technologies
IC FLASH 32MBIT PARALLEL 80FBGA
S29GL032N90FFI042
S29GL032N90FFI042
Infineon Technologies
IC FLASH 32MBIT PARALLEL 64FBGA