Infineon Technologies-BSS126IXTSA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id:	1.6V @ 8µA
Gate Charge (Qg) (Max) @ Vgs:	1.4 nC @ 5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	21 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	500mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-SOT23-3-5
Package / Case:	TO-236-3, SC-59, SOT-23-3

Infineon Technologies BSS126IXTSA1