BSS126 E6327
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Infineon Technologies BSS126 E6327

Manufacturer No:
BSS126 E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSS126 E6327 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 21MA SOT23-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):0V, 10V
Rds On (Max) @ Id, Vgs:500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id:1.6V @ 8µA
Gate Charge (Qg) (Max) @ Vgs:2.1 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:28 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSS126 E6327 BSS127 E6327  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 21mA (Ta) 21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 500Ohm @ 16mA, 10V 500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id 1.6V @ 8µA 2.6V @ 8µA
Gate Charge (Qg) (Max) @ Vgs 2.1 nC @ 5 V 1 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 28 pF @ 25 V 28 pF @ 25 V
FET Feature Depletion Mode -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT23 PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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