BSS123L6327HTSA1
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Infineon Technologies BSS123L6327HTSA1

Manufacturer No:
BSS123L6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSS123L6327HTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 170MA SOT23-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:2.67 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:69 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSS123L6327HTSA1 BSS126L6327HTSA1   BSS127L6327HTSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta) 21mA (Ta) 21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 0V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 170mA, 10V 500Ohm @ 16mA, 10V 500Ohm @ 16mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 50µA 1.6V @ 8µA 2.6V @ 8µA
Gate Charge (Qg) (Max) @ Vgs 2.67 nC @ 10 V 2.1 nC @ 5 V 1 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 69 pF @ 25 V 28 pF @ 25 V 28 pF @ 25 V
FET Feature - Depletion Mode -
Power Dissipation (Max) 360mW (Ta) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT23 PG-SOT23 PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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