BSR316PH6327XTSA1
  • Share:

Infineon Technologies BSR316PH6327XTSA1

Manufacturer No:
BSR316PH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSR316PH6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 360MA SC59
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id:1V @ 170µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:165 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SC59-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.67
651

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSR316PH6327XTSA1 BSP316PH6327XTSA1   BSR315PH6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 60 V
Current - Continuous Drain (Id) @ 25°C 360mA (Ta) 680mA (Ta) 620mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 360mA, 10V 1.8Ohm @ 680mA, 10V 800mOhm @ 620mA, 10V
Vgs(th) (Max) @ Id 1V @ 170µA 2V @ 170µA 2V @ 160µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V 6.4 nC @ 10 V 6 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 165 pF @ 25 V 146 pF @ 25 V 176 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 500mW (Tc) 1.8W (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SC59-3 PG-SOT223-4 PG-SC59-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-261-4, TO-261AA TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IXTP460P2
IXTP460P2
IXYS
MOSFET N-CH 500V 24A TO220AB
AOB66920L
AOB66920L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 22.5A/80A TO263
SIR846BDP-T1-RE3
SIR846BDP-T1-RE3
Vishay Siliconix
MOSFET N-CH 100V 16.1A/65.8 PPAK
NP50P04KDG-E1-AY
NP50P04KDG-E1-AY
Renesas Electronics America Inc
MOSFET P-CH 40V 50A TO263
IXTP26P10T
IXTP26P10T
IXYS
MOSFET P-CH 100V 26A TO220AB
APT38F80B2
APT38F80B2
Microchip Technology
MOSFET N-CH 800V 41A T-MAX
NTLUS4195PZTBG
NTLUS4195PZTBG
onsemi
MOSFET P-CH 30V 2A 6UDFN
BUK763R6-40C,118
BUK763R6-40C,118
Nexperia USA Inc.
MOSFET N-CH 40V 100A D2PAK
2SJ665-DL-E
2SJ665-DL-E
onsemi
MOSFET P-CH 100V 27A SMP-FD
AOD2904
AOD2904
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 10.5A/70A TO252
NVMFS5844NLT1G
NVMFS5844NLT1G
onsemi
MOSFET N-CH 60V 11.2A 5DFN
R5021ANJTL
R5021ANJTL
Rohm Semiconductor
MOSFET N-CH 500V 21A LPTS

Related Product By Brand

BAT1706WE6327HTSA1
BAT1706WE6327HTSA1
Infineon Technologies
DIODE SCHOTTKY 4V 150MW SOT323-3
AUIRFS6535TRL
AUIRFS6535TRL
Infineon Technologies
MOSFET N-CH 300V 19A D2PAK
IRFS7430PBF
IRFS7430PBF
Infineon Technologies
TRENCH <= 40V
IRFR9014N
IRFR9014N
Infineon Technologies
MOSFET P-CH 60V 5.1A DPAK
IRFR6215PBF
IRFR6215PBF
Infineon Technologies
MOSFET P-CH 150V 13A DPAK
IPI08CN10N G
IPI08CN10N G
Infineon Technologies
MOSFET N-CH 100V 95A TO262-3
IGP15N60TXKSA1
IGP15N60TXKSA1
Infineon Technologies
IGBT 600V 30A 130W TO220-3
IRS21864SPBF
IRS21864SPBF
Infineon Technologies
IC GATE DRVR HI/LOW SIDE 14SOIC
IR21592PBF
IR21592PBF
Infineon Technologies
IC BALLAST CNTRL 95KHZ 16DIP
CY2548QIT
CY2548QIT
Infineon Technologies
PREMIS SSCG EMI REDUCTION
MB90F549GPF-G
MB90F549GPF-G
Infineon Technologies
IC MCU 16BIT 256KB FLASH 100QFP
MB90347ASPFV-G-231E1
MB90347ASPFV-G-231E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP