BSR316PH6327XTSA1
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Infineon Technologies BSR316PH6327XTSA1

Manufacturer No:
BSR316PH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSR316PH6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 360MA SC59
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 360mA, 10V
Vgs(th) (Max) @ Id:1V @ 170µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:165 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SC59-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number BSR316PH6327XTSA1 BSP316PH6327XTSA1   BSR315PH6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 60 V
Current - Continuous Drain (Id) @ 25°C 360mA (Ta) 680mA (Ta) 620mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 360mA, 10V 1.8Ohm @ 680mA, 10V 800mOhm @ 620mA, 10V
Vgs(th) (Max) @ Id 1V @ 170µA 2V @ 170µA 2V @ 160µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V 6.4 nC @ 10 V 6 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 165 pF @ 25 V 146 pF @ 25 V 176 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 500mW (Tc) 1.8W (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SC59-3 PG-SOT223-4 PG-SC59-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-261-4, TO-261AA TO-236-3, SC-59, SOT-23-3

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