BSP89L6327HTSA1
  • Share:

Infineon Technologies BSP89L6327HTSA1

Manufacturer No:
BSP89L6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP89L6327HTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 240V 350MA SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):240 V
Current - Continuous Drain (Id) @ 25°C:350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs:6.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4-21
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

-
331

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSP89L6327HTSA1 BSP88L6327HTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 240 V 240 V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta) 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.8V, 4.5V
Rds On (Max) @ Id, Vgs 6Ohm @ 350mA, 10V 6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 108µA 1.4V @ 108µA
Gate Charge (Qg) (Max) @ Vgs 6.4 nC @ 10 V 6.8 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V 95 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta) 1.7W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4-21 PG-SOT223-4-21
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

SFS9640
SFS9640
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR
BUK7507-55B,127
BUK7507-55B,127
NXP USA Inc.
PFET, 119A I(D), 55V, 0.0071OHM,
SIR186LDP-T1-RE3
SIR186LDP-T1-RE3
Vishay Siliconix
N-CHANNEL 60-V (D-S) MOSFET POWE
IXFA4N100Q
IXFA4N100Q
IXYS
MOSFET N-CH 1000V 4A TO263
FQU2N60CTU
FQU2N60CTU
onsemi
MOSFET N-CH 600V 1.9A IPAK
PJE8412_R1_00001
PJE8412_R1_00001
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
DMP1055USW-13
DMP1055USW-13
Diodes Incorporated
MOSFET P-CH 12V 3.8A SOT363
IRF644N
IRF644N
Vishay Siliconix
MOSFET N-CH 250V 14A TO220AB
AUIRL7766M2TR
AUIRL7766M2TR
Infineon Technologies
MOSFET N-CH 100V 10A DIRECTFET
AUIRF3808S
AUIRF3808S
Infineon Technologies
MOSFET N-CH 75V 106A D2PAK
NVTFS4823NWFTWG
NVTFS4823NWFTWG
onsemi
MOSFET N-CH 30V 13A 8WDFN
AO6415L
AO6415L
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 20V 3.3A 6TSOP

Related Product By Brand

BCR198TE6327
BCR198TE6327
Infineon Technologies
BIPOLAR DIGITAL TRANSISTOR
BSP320SH6327XTSA1
BSP320SH6327XTSA1
Infineon Technologies
MOSFET N-CH 60V 2.9A SOT223-4
IPD65R950CFDATMA1
IPD65R950CFDATMA1
Infineon Technologies
MOSFET N-CH 650V 3.9A TO252-3
BSS138N E8004
BSS138N E8004
Infineon Technologies
MOSFET N-CH 60V 230MA SOT23-3
IPP100N06S3-03
IPP100N06S3-03
Infineon Technologies
MOSFET N-CH 55V 100A TO220-3
BTS500101TADATMA2
BTS500101TADATMA2
Infineon Technologies
IC PWR HIC-PROFET N-CH 1:1 TO263
CY2309CSXI-1T
CY2309CSXI-1T
Infineon Technologies
IC CLK ZDB 9OUT 133MHZ 16SOIC
MB91F526DSBPMC-GTE1
MB91F526DSBPMC-GTE1
Infineon Technologies
IC MCU 32B 1.0625MB FLASH 80LQFP
S25FL128SAGMFIR01
S25FL128SAGMFIR01
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC
S29GL128S90FHSS30
S29GL128S90FHSS30
Infineon Technologies
IC FLASH 128MBIT PARALLEL 64FBGA
CY7S1041G30-10BVXIT
CY7S1041G30-10BVXIT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 48VFBGA
S25FL512SDSMFM010
S25FL512SDSMFM010
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 16SOIC