Infineon Technologies-BSP62E6327HTSA1 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BSP62E6327HTSA1	BSP52E6327HTSA1	BSP60E6327HTSA1	BSP61E6327HTSA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Product Status	Obsolete	Active	Obsolete	Obsolete
Transistor Type	PNP - Darlington	NPN - Darlington	PNP - Darlington	PNP - Darlington
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	45 V	60 V
Vce Saturation (Max) @ Ib, Ic	1.8V @ 1mA, 1A	1.8V @ 1mA, 1A	1.8V @ 1mA, 1A	1.8V @ 1mA, 1A
Current - Collector Cutoff (Max)	10µA	10µA	10µA	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 500mA, 10V	2000 @ 500mA, 10V	2000 @ 500mA, 10V	2000 @ 500mA, 10V
Power - Max	1.5 W	1.5 W	1.5 W	1.5 W
Frequency - Transition	200MHz	200MHz	200MHz	200MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	PG-SOT223-4	PG-SOT223-4	PG-SOT223-4	PG-SOT223-4

Infineon Technologies BSP62E6327HTSA1

Transistor Type:	PNP - Darlington
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	1.8V @ 1mA, 1A
Current - Collector Cutoff (Max):	10µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	2000 @ 500mA, 10V
Power - Max:	1.5 W
Frequency - Transition:	200MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	PG-SOT223-4