BSP613PH6327XTSA1
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Infineon Technologies BSP613PH6327XTSA1

Manufacturer No:
BSP613PH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP613PH6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 60V 2.9A SOT223-4
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:875 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number BSP613PH6327XTSA1 BSP612PH6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Obsolete
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V -
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 130mOhm @ 2.9A, 10V -
Vgs(th) (Max) @ Id 4V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 875 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 1.8W (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package PG-SOT223-4 -
Package / Case TO-261-4, TO-261AA -

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