BSP372 E6327
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Infineon Technologies BSP372 E6327

Manufacturer No:
BSP372 E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP372 E6327 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 1.7A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:310mOhm @ 1.7A, 5V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±14V
Input Capacitance (Ciss) (Max) @ Vds:520 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number BSP372 E6327 BSP373 E6327  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta) 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 10V
Rds On (Max) @ Id, Vgs 310mOhm @ 1.7A, 5V 300mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±14V ±20V
Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 25 V 550 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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