BSP322PH6327XTSA1
  • Share:

Infineon Technologies BSP322PH6327XTSA1

Manufacturer No:
BSP322PH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP322PH6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 1A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:800mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:1V @ 380µA
Gate Charge (Qg) (Max) @ Vgs:16.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:372 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$1.09
20

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSP322PH6327XTSA1 BSP321PH6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc) 980mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 1A, 10V 900mOhm @ 980mA, 10V
Vgs(th) (Max) @ Id 1V @ 380µA 4V @ 380µA
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 372 pF @ 25 V 319 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

IXFR64N60Q3
IXFR64N60Q3
IXYS
MOSFET N-CH 600V 42A ISOPLUS247
SQS462EN-T1_GE3
SQS462EN-T1_GE3
Vishay Siliconix
MOSFET N-CH 60V 8A PPAK1212-8
DMTH8001STLW-13
DMTH8001STLW-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI10
SIHH14N65E-T1-GE3
SIHH14N65E-T1-GE3
Vishay Siliconix
MOSFET N-CH 650V 15A PPAK 8 X 8
APT10M11JVFR
APT10M11JVFR
Microchip Technology
MOSFET N-CH 100V 144A ISOTOP
IRF2807SPBF
IRF2807SPBF
Infineon Technologies
MOSFET N-CH 75V 82A D2PAK
STS6PF30L
STS6PF30L
STMicroelectronics
MOSFET P-CH 30V 6A 8SO
SI4812BDY-T1-E3
SI4812BDY-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 7.3A 8SO
SI1305DL-T1-GE3
SI1305DL-T1-GE3
Vishay Siliconix
MOSFET P-CH 8V 0.86A SC-70-3
ECH8315-TL-W
ECH8315-TL-W
onsemi
MOSFET P-CH 30V 7.5A SOT28FL
RSJ400N06TL
RSJ400N06TL
Rohm Semiconductor
MOSFET N-CH 60V 40A LPTS
SCT3080ALGC11
SCT3080ALGC11
Rohm Semiconductor
SICFET N-CH 650V 30A TO247N

Related Product By Brand

ESD3V3U1U02LSE6327XTSA1
ESD3V3U1U02LSE6327XTSA1
Infineon Technologies
TVS DIODE 3.3VWM 28VC TSSLP-2-1
IRLB3034PBF
IRLB3034PBF
Infineon Technologies
MOSFET N-CH 40V 195A TO220AB
IRL1104S
IRL1104S
Infineon Technologies
MOSFET N-CH 40V 104A D2PAK
IRLU7833-701PBF
IRLU7833-701PBF
Infineon Technologies
MOSFET N-CH 30V 140A IPAK
IRMCK099MTR
IRMCK099MTR
Infineon Technologies
IC MOTOR DRIVER 3V-3.6V 32QFN
IR3500VMTRPBF
IR3500VMTRPBF
Infineon Technologies
IC XPHASE3 CTLR VR11.1 32-MLPQ
CY7C68013-56PVC
CY7C68013-56PVC
Infineon Technologies
IC MCU USB PERIPH HI SPD 56SSOP
CY8C4126AZI-S433T
CY8C4126AZI-S433T
Infineon Technologies
IC MCU 32BIT 64KB FLASH 48TQFP
MB90347DASPFV-GS-394E1
MB90347DASPFV-GS-394E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
CY9AF155NBBGL-GE1
CY9AF155NBBGL-GE1
Infineon Technologies
IC MCU 32BIT 416KB FLSH 112PFBGA
S25FL116K0XNFIQ11
S25FL116K0XNFIQ11
Infineon Technologies
IC FLASH 16MBIT SPI/QUAD 8WSON
S40410081B1B2I003
S40410081B1B2I003
Infineon Technologies
IC FLASH 8GBIT PARALLEL 100LBGA