BSP321PH6327XTSA1
  • Share:

Infineon Technologies BSP321PH6327XTSA1

Manufacturer No:
BSP321PH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP321PH6327XTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 980MA SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:980mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 980mA, 10V
Vgs(th) (Max) @ Id:4V @ 380µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:319 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$1.00
607

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSP321PH6327XTSA1 BSP322PH6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 980mA (Tc) 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 980mA, 10V 800mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 380µA 1V @ 380µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 16.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 319 pF @ 25 V 372 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4 PG-SOT223-4
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

3N170 TO-72 4L
3N170 TO-72 4L
Linear Integrated Systems, Inc.
N-CHANNEL ENHANCEMENT MODE MOSFE
STP120NF10
STP120NF10
STMicroelectronics
MOSFET N-CH 100V 110A TO220AB
STL8N65M2
STL8N65M2
STMicroelectronics
MOSFET N-CH 650V 5A PWRFLAT56 HV
SI2324DS-T1-GE3
SI2324DS-T1-GE3
Vishay Siliconix
MOSFET N-CH 100V 2.3A SOT23-3
CSD17573Q5B
CSD17573Q5B
Texas Instruments
MOSFET N-CH 30V 100A 8VSON
IPD40DP06NMATMA1
IPD40DP06NMATMA1
Infineon Technologies
MOSFET P-CH 60V 4.3A TO252-3
IRFR420TRRPBF
IRFR420TRRPBF
Vishay Siliconix
MOSFET N-CH 500V 2.4A DPAK
IRFB42N20D
IRFB42N20D
Infineon Technologies
MOSFET N-CH 200V 44A TO220AB
BSP373L6327HTSA1
BSP373L6327HTSA1
Infineon Technologies
MOSFET N-CH 100V 1.7A SOT223-4
STD70N03L
STD70N03L
STMicroelectronics
MOSFET N-CH 30V 70A DPAK
RF6E065BNTCR
RF6E065BNTCR
Rohm Semiconductor
MOSFET N-CH 30V 6.5A TUMT6
R6008ANX
R6008ANX
Rohm Semiconductor
MOSFET N-CH 600V 8A TO-220FM

Related Product By Brand

BCR 185T E6327
BCR 185T E6327
Infineon Technologies
TRANS PREBIAS PNP 250MW SC75
PTFA210601F V4
PTFA210601F V4
Infineon Technologies
IC FET RF LDMOS 60W H-37265-2
IRFR3704ZTRL
IRFR3704ZTRL
Infineon Technologies
MOSFET N-CH 20V 60A DPAK
IPI16CNE8N G
IPI16CNE8N G
Infineon Technologies
MOSFET N-CH 85V 53A TO262-3
SPW20N60C3E8177FKSA1
SPW20N60C3E8177FKSA1
Infineon Technologies
MOSFET N-CH
SIGC57T120R3LEX1SA3
SIGC57T120R3LEX1SA3
Infineon Technologies
IGBT 1200V 50A DIE
CY2CC1810OXI
CY2CC1810OXI
Infineon Technologies
IC CLK BUFFER 1:10 200MHZ 24SSOP
CY23S02SXI-1
CY23S02SXI-1
Infineon Technologies
IC CLK FREQ MULTI/ZDB 2OUT 8SOIC
MB90F867ESPMC-G-SN-YE1
MB90F867ESPMC-G-SN-YE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100LQFP
S71KL512SC0BHB000
S71KL512SC0BHB000
Infineon Technologies
IC FLASH RAM 512MBIT PAR 24FBGA
CY7C1372D-167AXIT
CY7C1372D-167AXIT
Infineon Technologies
IC SRAM 18MBIT PARALLEL 100TQFP
STK14CA8-RF25ITR
STK14CA8-RF25ITR
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 48SSOP