BSP317PL6327HTSA1
  • Share:

Infineon Technologies BSP317PL6327HTSA1

Manufacturer No:
BSP317PL6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BSP317PL6327HTSA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 250V 430MA SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:430mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4Ohm @ 430mA, 10V
Vgs(th) (Max) @ Id:2V @ 370µA
Gate Charge (Qg) (Max) @ Vgs:15.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:262 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223-4-21
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

-
134

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSP317PL6327HTSA1 BSP315PL6327HTSA1   BSP316PL6327HTSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 60 V 100 V
Current - Continuous Drain (Id) @ 25°C 430mA (Ta) 1.17A (Ta) 680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 430mA, 10V 800mOhm @ 1.17A, 10V 1.8Ohm @ 680mA, 10V
Vgs(th) (Max) @ Id 2V @ 370µA 2V @ 160µA 2V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 15.1 nC @ 10 V 7.8 nC @ 10 V 6.4 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 262 pF @ 25 V 160 pF @ 25 V 146 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.8W (Ta) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT223-4-21 PG-SOT223-4-21 PG-SOT223-4-21
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

SPW47N60C3FKSA1
SPW47N60C3FKSA1
Infineon Technologies
MOSFET N-CH 650V 47A TO247-3
NTHS4111PT1
NTHS4111PT1
onsemi
P-CHANNEL MOSFET
EPC2059
EPC2059
EPC
TRANS GAN 170V DIE .009OHM
IXTA06N120P
IXTA06N120P
IXYS
MOSFET N-CH 1200V 600MA TO263
PSMN038-100YLX
PSMN038-100YLX
Nexperia USA Inc.
MOSFET N-CH 100V 30A LFPAK56
BS107PSTOA
BS107PSTOA
Diodes Incorporated
MOSFET N-CH 200V 120MA E-LINE
SPI47N10L
SPI47N10L
Infineon Technologies
MOSFET N-CH 100V 47A TO262-3
SPD03N60S5BTMA1
SPD03N60S5BTMA1
Infineon Technologies
MOSFET N-CH 600V 3.2A TO252-3
IXTA27N20T
IXTA27N20T
IXYS
MOSFET N-CH 20V 27A TO263
PMN15UN,115
PMN15UN,115
NXP USA Inc.
MOSFET N-CH 30V 8A 6TSOP
IRFS7734-7PPBF
IRFS7734-7PPBF
Infineon Technologies
MOSFET N-CH 75V 197A D2PAK
RQ1A070APTR
RQ1A070APTR
Rohm Semiconductor
MOSFET P-CH 12V 7A TSMT8

Related Product By Brand

IRF9910
IRF9910
Infineon Technologies
MOSFET 2N-CH 20V 10A 8-SOIC
IRL3714STRL
IRL3714STRL
Infineon Technologies
MOSFET N-CH 20V 36A D2PAK
IRL1104SPBF
IRL1104SPBF
Infineon Technologies
MOSFET N-CH 40V 104A D2PAK
IRF9388PBF
IRF9388PBF
Infineon Technologies
MOSFET P-CH 30V 12A 8SO
6PS04512E43G37986NOSA1
6PS04512E43G37986NOSA1
Infineon Technologies
IGBT MODULE 1200V 217A
TLE98422QXXUMA1
TLE98422QXXUMA1
Infineon Technologies
EMBEDDED POWER
MB90428GAPMC-GS-162
MB90428GAPMC-GS-162
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
CY90922NCSPMC-GS-189E1-ND
CY90922NCSPMC-GS-189E1-ND
Infineon Technologies
IC MCU 16BIT 256KB MROM 120LQFP
S25FL128SAGMFA001
S25FL128SAGMFA001
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC
CY62256NLL-70ZRXI
CY62256NLL-70ZRXI
Infineon Technologies
IC SRAM 256KBIT PAR 28TSOP I
CY7C1512V18-167BZXI
CY7C1512V18-167BZXI
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
S34ML08G101BHA003
S34ML08G101BHA003
Infineon Technologies
IC FLASH 8GBIT PARALLEL 63BGA