BSP317PL6327
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Infineon Technologies BSP317PL6327

Manufacturer No:
BSP317PL6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BSP317PL6327 Datasheet
ECAD Model:
-
Description:
P-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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In Stock

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Similar Products

Part Number BSP317PL6327 BSP316PL6327   BSP317PE6327  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete
FET Type - - P-Channel
Technology - - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - - 250 V
Current - Continuous Drain (Id) @ 25°C - - 430mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) - - 4.5V, 10V
Rds On (Max) @ Id, Vgs - - 4Ohm @ 430mA, 10V
Vgs(th) (Max) @ Id - - 2V @ 370µA
Gate Charge (Qg) (Max) @ Vgs - - 15.1 nC @ 10 V
Vgs (Max) - - ±20V
Input Capacitance (Ciss) (Max) @ Vds - - 262 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) - - 1.8W (Ta)
Operating Temperature - - -55°C ~ 150°C (TJ)
Mounting Type - - Surface Mount
Supplier Device Package - - PG-SOT223-4
Package / Case - - TO-261-4, TO-261AA

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