BSP317PL6327
  • Share:

Infineon Technologies BSP317PL6327

Manufacturer No:
BSP317PL6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BSP317PL6327 Datasheet
ECAD Model:
-
Description:
P-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
501

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSP317PL6327 BSP316PL6327   BSP317PE6327  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete
FET Type - - P-Channel
Technology - - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - - 250 V
Current - Continuous Drain (Id) @ 25°C - - 430mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) - - 4.5V, 10V
Rds On (Max) @ Id, Vgs - - 4Ohm @ 430mA, 10V
Vgs(th) (Max) @ Id - - 2V @ 370µA
Gate Charge (Qg) (Max) @ Vgs - - 15.1 nC @ 10 V
Vgs (Max) - - ±20V
Input Capacitance (Ciss) (Max) @ Vds - - 262 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) - - 1.8W (Ta)
Operating Temperature - - -55°C ~ 150°C (TJ)
Mounting Type - - Surface Mount
Supplier Device Package - - PG-SOT223-4
Package / Case - - TO-261-4, TO-261AA

Related Product By Categories

TSM056NH04LCR RLG
TSM056NH04LCR RLG
Taiwan Semiconductor Corporation
40V, 54A, SINGLE N-CHANNEL POWER
SI1308EDL-T1-BE3
SI1308EDL-T1-BE3
Vishay Siliconix
MOSFET N-CH 30V 1.5A/1.4A SC70-3
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
FCPF20N60ST
FCPF20N60ST
Fairchild Semiconductor
20A, 600V, 0.19OHM, N CHANNEL ,
SIJH600E-T1-GE3
SIJH600E-T1-GE3
Vishay Siliconix
N-CHANNEL 60-V (D-S) 175C MOSFET
PSMN8R7-100YSFX
PSMN8R7-100YSFX
Nexperia USA Inc.
MOSFET N-CH 100V 100A LFPAK56
GT105N10T
GT105N10T
Goford Semiconductor
N100V,RD(MAX)<10.5M@10V,RD(MAX)<
P3M12025K3
P3M12025K3
PN Junction Semiconductor
SICFET N-CH 1200V 113A TO-247-3
IRFB13N50A
IRFB13N50A
Vishay Siliconix
MOSFET N-CH 500V 14A TO220AB
BSP170PL6327HTSA1
BSP170PL6327HTSA1
Infineon Technologies
MOSFET P-CH 60V 1.9A SOT223-4
IPB80N06S3-05
IPB80N06S3-05
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
R6511ENJTL
R6511ENJTL
Rohm Semiconductor
MOSFET N-CH 650V 11A LPTS

Related Product By Brand

TDA5102-TDA5212_915_5
TDA5102-TDA5212_915_5
Infineon Technologies
KIT SAMPLE FSK TX/RX 915MHZ
BAR151E6327HTSA1
BAR151E6327HTSA1
Infineon Technologies
RF DIODE PIN 100V 250MW SOT23-3
SP001017058
SP001017058
Infineon Technologies
IPP60R380P6 - 600V N-CHANNEL
IRF6648TRPBF
IRF6648TRPBF
Infineon Technologies
MOSFET N-CH 60V 86A DIRECTFET MN
IR2112STRPBF
IR2112STRPBF
Infineon Technologies
IC GATE DRVR HI/LOW SIDE 16SOIC
IRS21844MPBF
IRS21844MPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 16MLPQ
BGSA400ML10E6327XTSA1
BGSA400ML10E6327XTSA1
Infineon Technologies
ANTENNA DEVICES PG-TSLP-10
CY96F613ABPMC-GS-UJE2
CY96F613ABPMC-GS-UJE2
Infineon Technologies
IC MCU 16BIT 96KB FLASH 48LQFP
S25FL128SDPMFV001
S25FL128SDPMFV001
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC
CY7C1061GE18-15ZSXIT
CY7C1061GE18-15ZSXIT
Infineon Technologies
IC SRAM 16MBIT PAR 54TSOP II
CY7C09369V-6AXC
CY7C09369V-6AXC
Infineon Technologies
IC SRAM 288KBIT PARALLEL 100TQFP
CY7C1443KV33-133AXI
CY7C1443KV33-133AXI
Infineon Technologies
IC SRAM 36MBIT PARALLEL 100TQFP